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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1358 DESCRIPTION *With TO-3 package *High breakdown voltage *High speed switching APPLICATIONS *Designed for use in large screen color deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1400 500 6 4.5 10 1.5 50 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1358 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 10 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA A ICBO Collector cut-off current VCB=1000V; IE=0 20 IEBO Emitter cut-off current VEB=5V; IC=0 200 A hFE-1 DC current gain IC=0.5A ; VCE=15V 10 45 hFE-2 DC current gain IC=3A ; VCE=15V 5 35 s tstg Storage time IC=4A; IB1=-IB2=1.0A PW=20s 10 tf Fall time 1.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1358 Fig.2 Outline dimensions 3 |
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